BSM50GAL120DN2

更新时间： 2024-11-15 22:07:27

品牌	Logo	应用领域
英飞凌 - INFINEON		断路器二极管开关双极性晶体管
页数	文件大小	规格书
5页	66K
描述
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate)

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BSM50GAL120DN2 数据手册

BSM 50 GAL 120 DN2

IGBT Power Module

• Single switch with chopper diode

• Including fast free-wheeling diodes

• Package with insulated metal base plate

Type

Package

Ordering Code

BSM 50 GAL 120 DN2

1200V 78A

HALF BRIDGE GAL 1 C67076-A2010-A70

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

Collector-gate voltage

1200

CGR

Ω

= 20 k

1200

± 20

Gate-emitter voltage

DC collector current

T = 25 °C

T = 80 °C

Pulsed collector current, t = 1 ms

Cpuls

T = 25 °C

156

100

T = 80 °C

Power dissipation per IGBT

tot

T = 25 °C

400

Chip temperature

+ 150

°C

Storage temperature

-55 ... + 150

stg

Thermal resistance, chip case

Diode thermal resistance, chip case

Diode thermal resistance, chip-case,chopper

Insulation test voltage, t = 1min.

Creepage distance

≤ 0.3

K/W

thJC

≤

0.6

thJCD

RTHJCDC

≤ 0.5

2500

Vac

Clearance

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

55 / 150 / 56

Semiconductor Group

Mar-29-1996

12 3 4 5

中文翻译

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