Datasheet > BSM50GD60DN2

BSM50GD60DN2

更新时间： 2024-09-27 22:07:27

品牌	Logo	应用领域
英飞凌 - INFINEON		电源电路二极管双极性晶体管栅
页数	文件大小	规格书
9页	127K
描述
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)

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中文翻译

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数据手册

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BSM50GD60DN2 数据手册

BSM 50 GD 60 DN2

IGBT Power Module

• Power module

• 3-phase full-bridge

• Including fast free-wheel diodes

• Package with insulated metal base plate

Type

Package

Ordering Code

BSM 50 GD 60 DN2

600V 50A

ECONOPACK 2K

C67076-A2515-A67

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

Collector-gate voltage

600

CGR

Ω

= 20 k

600

Gate-emitter voltage

DC collector current

± 20

T = 40 °C

Pulsed collector current, t = 1 ms

Cpuls

T = 40 °C

100

Power dissipation per IGBT

tot

T = 25 °C

200

Chip temperature

+ 150

°C

Storage temperature

-55 ... + 150

stg

≤

Thermal resistance, chip case

Diode thermal resistance, chip case

Insulation test voltage, t = 1min.

Creepage distance

0.6

K/W

thJC

thJCD

≤ 1.5

2500

Vac

Clearance

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

sec

55 / 150 / 56

Semiconductor Group

Jan-10-1997

12 3 4 5 6 7...9

中文翻译

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