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BSM50GD120DN2G PDF预览

BSM50GD120DN2G

更新时间: 2024-11-15 22:07:27
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体电源电路二极管晶体管双极性晶体管
页数 文件大小 规格书
9页 186K
描述
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)

BSM50GD120DN2G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-XUFM-T39针数:39
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.6外壳连接:ISOLATED
最大集电极电流 (IC):78 A集电极-发射极最大电压:1200 V
配置:BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE门极-发射极最大电压:20 V
JESD-30 代码:R-XUFM-T39元件数量:6
端子数量:39最高工作温度:125 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):400 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):450 ns标称接通时间 (ton):100 ns
VCEsat-Max:3.7 VBase Number Matches:1

BSM50GD120DN2G 数据手册

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BSM 50 GD 120 DN2G  
IGBT Power Module  
Preliminary data  
• Power module  
• 3-phase full-bridge  
• Including fast free-wheel diodes  
• Package with insulated metal base plate  
Type  
V
I
Package  
Ordering Code  
CE  
C
BSM 50 GD 120 DN2G  
1200V 78A  
ECONOPACK 3  
C67070-A2521-A67  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Collector-emitter voltage  
Collector-gate voltage  
V
V
1200  
V
CE  
CGR  
R
= 20 k  
1200  
± 20  
GE  
Gate-emitter voltage  
DC collector current  
V
GE  
I
I
A
C
T = 25 °C  
78  
50  
C
T = 80 °C  
C
Pulsed collector current, t = 1 ms  
p
Cpuls  
T = 25 °C  
156  
100  
C
T = 80 °C  
C
Power dissipation per IGBT  
P
W
tot  
T = 25 °C  
400  
C
Chip temperature  
T
+ 150  
°C  
j
Storage temperature  
T
-55 ... + 150  
stg  
Thermal resistance, chip case  
Diode thermal resistance, chip case  
Insulation test voltage, t = 1min.  
Creepage distance  
R
R
0.35  
0.7  
K/W  
thJC  
thJCD  
is  
V
-
2500  
Vac  
mm  
16  
Clearance  
-
11  
DIN humidity category, DIN 40 040  
IEC climatic category, DIN IEC 68-1  
-
F
-
-
55 / 150 / 56  
Semiconductor Group  
1
Aug-23-1996  

BSM50GD120DN2G 替代型号

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