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BSC022N03S PDF预览

BSC022N03S

更新时间: 2024-11-19 22:27:55
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 299K
描述
OptiMOS2 Power-Transistor

BSC022N03S 数据手册

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BSC022N03S  
OptiMOS®2 Power-Transistor  
Product Summary  
Features  
V DS  
30  
2.2  
50  
V
• Fast switching MOSFET for SMPS  
• Optimized technology for notebook DC/DC converters  
• Qualified according to JEDEC1 for target applications  
• N-channel  
R DS(on),max  
I D  
m  
A
• Logic level  
P-TDSON-8  
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance R DS(on)  
• Superior thermal resistance  
• Avalanche rated  
• dv /dt rated  
Type  
Package  
Ordering Code Marking  
Q67042-S4218 22N03S  
BSC022N03S  
P-TDSON-8  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T C=25 °C  
Continuous drain current  
50  
50  
A
T C=100 °C  
T A=25 °C,  
28  
R thJA=45 K/W2)  
T C=25 °C3)  
I D,pulse  
E AS  
Pulsed drain current  
200  
800  
I D=50 A, R GS=25 Ω  
Avalanche energy, single pulse  
mJ  
I D=50 A, V DS=24 V,  
di /dt =200 A/µs,  
T j,max=150 °C  
Reverse diode dv /dt  
dv /dt  
6
kV/µs  
V GS  
P tot  
Gate source voltage  
Power dissipation  
±20  
104  
V
T C=25 °C  
W
T A=25 °C,  
2.8  
R thJA=45 K/W2)  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 150  
55/150/56  
°C  
Rev. 1.2  
page 1  
2004-04-13  

BSC022N03S 替代型号

型号 品牌 替代类型 描述 数据表
BSC022N03SG INFINEON

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OptiMOS™2 Power-Transistor

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