Datasheet > BLF25M612G,112

BLF25M612G,112

更新时间： 2024-11-05 22:07:43

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
11页	975K
描述
RF FET LDMOS 65V 19DB SOT975C

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BLF25M612G,112 数据手册

BLF25M612; BLF25M612G

Power LDMOS transistor

Rev. 4 — 1 September 2015

Product data sheet

1. Product profile

1.1 General description

12 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at

frequencies from 2400 MHz to 2500 MHz.

The BLF25M612 and BLF25M612G are drivers designed for high power CW applications

and is assembled in a high performance ceramic package.

Table 1.

Typical performance

RF performance at T_case= 25 C in a common source class-AB production test circuit.

Test signal

V_DS

(V)

P_L(AV)

(W)

G_p

_D

(MHz)

2450

(dB)

(%)

1.2 Features and benefits

 High efficiency

 High power gain

 Excellent ruggedness

 Excellent thermal stability

 Integrated ESD protection

 Designed for broadband operation (2400 MHz to 2500 MHz)

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 Industrial, scientific and medical applications in the frequency range 2400 MHz to

2500 MHz (this product is qualified according to the solid state cooking profile)

12 3 4 5 6 7...11

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