BLF25M612; BLF25M612G
Power LDMOS transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
12 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at
frequencies from 2400 MHz to 2500 MHz.
The BLF25M612 and BLF25M612G are drivers designed for high power CW applications
and is assembled in a high performance ceramic package.
Table 1.
Typical performance
RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
VDS
(V)
28
PL(AV)
(W)
Gp
D
(MHz)
2450
(dB)
19
(%)
60
CW
12
1.2 Features and benefits
High efficiency
High power gain
Excellent ruggedness
Excellent thermal stability
Integrated ESD protection
Designed for broadband operation (2400 MHz to 2500 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications in the frequency range 2400 MHz to
2500 MHz (this product is qualified according to the solid state cooking profile)