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BLF278,112 PDF预览

BLF278,112

更新时间: 2024-01-31 09:12:53
品牌 Logo 应用领域
其他 - ETC 局域网放大器晶体管
页数 文件大小 规格书
23页 265K
描述
RF FET 2 NC 125V 22DB SOT262A1

BLF278,112 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DFM包装说明:SOT-262A1, 4 PIN
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.19其他特性:HIGH RELIABILITY
外壳连接:SOURCE配置:COMMON SOURCE, 2 ELEMENTS
最小漏源击穿电压:125 V最大漏极电流 (Abs) (ID):18 A
最大漏极电流 (ID):18 A最大漏源导通电阻:0.3 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最高频带:VERY HIGH FREQUENCY BAND
JESD-30 代码:R-CDFM-F4元件数量:2
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
功耗环境最大值:500 W最大功率耗散 (Abs):500 W
最小功率增益 (Gp):20 dB认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

BLF278,112 数据手册

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BLF278  
VHF push-pull power MOS transistor  
Rev. 5 — 1 September 2015  
Product data sheet  
IMPORTANT NOTICE  
Dear customer,  
As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as  
an independent company under the new trade name Ampleon, which will be used  
in future data sheets together with new contact details.  
In data sheets, where the previous Philips references is mentioned, please use  
the new links as shown below.  
http://www.philips.semiconductors.com use http://www.ampleon.com  
http://www.semiconductors.philips.com use http://www.ampleon.com (Internet)  
sales.addresses@www.semiconductors.philips.com use  
http://www.ampleon.com/sales  
The copyright notice at the bottom of each page (or elsewhere in the document,  
depending on the version)  
- © Koninklijke Philips Electronics N.V. (year). All rights reserved -  
is replaced with:  
- © Ampleon B.V. (year). All rights reserved. -  
If you have any questions related to the data sheet, please contact our nearest  
sales office (details via http://www.ampleon.com/sales).  
Thank you for your cooperation and understanding,  
Ampleon  

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