Datasheet > BLF174XRS,112

BLF174XRS,112

更新时间： 2024-09-15 22:07:43

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
13页	946K
描述
RF FET LDMOS 110V 28DB SOT1214B

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BLF174XRS,112 数据手册

BLF174XR; BLF174XRS

Power LDMOS transistor

Rev. 2 — 1 September 2015

Product data sheet

1. Product profile

1.1 General description

A 600 W extremely rugged LDMOS power transistor for broadcast and industrial

applications in the HF to 128 MHz band.

Table 1.

Application information

Test signal

V_DS

(V)

P_L

G_p

_D

(%)

(MHz)

108

(W)

600

(dB)

28.5

pulsed RF

1.2 Features and benefits

 Easy power control

 Integrated ESD protection

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (HF to 128 MHz)

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 Industrial, scientific and medical applications

 Broadcast transmitter applications

12 3 4 5 6 7...13

中文翻译

下载PDF

与BLF174XRS,112相关器件

型号	品牌	获取价格	描述	数据表
BLF175	NXP	获取价格	HF/VHF power MOS transistor
BLF175	NJSEMI	获取价格	Trans RF MOSFET N-CH 125V 4A 4-Pin SOT-123A
BLF175,112	NXP	获取价格	BLF175
BLF175_15	JMNIC	获取价格	HF/VHF power MOS transistor
BLF175_2015	JMNIC	获取价格	HF/VHF power MOS transistor
BLF177	NXP	获取价格	HF/VHF power MOS transistor
BLF177	NJSEMI	获取价格	Trans RF MOSFET N-CH 125V 16A 4-Pin CRFM
BLF177_15	JMNIC	获取价格	HF/VHF power MOS transistor
BLF177_2015	JMNIC	获取价格	HF/VHF power MOS transistor
BLF178P	NXP	获取价格	RF Manual 16th edition