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BLF178XRS PDF预览

BLF178XRS

更新时间: 2024-11-21 12:32:23
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
14页 339K
描述
Power LDMOS transistor

BLF178XRS 数据手册

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BLF178XR; BLF178XRS  
Power LDMOS transistor  
Rev. 4 — 12 July 2013  
Product data sheet  
1. Product profile  
1.1 General description  
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial  
applications in the HF to 128 MHz band.  
Table 1.  
Application information  
Test signal  
f
VDS  
(V)  
50  
PL  
Gp  
D  
(%)  
80  
(MHz)  
108  
108  
(W)  
(dB)  
23  
CW  
1200  
1400  
pulsed RF  
50  
28  
72  
1.2 Features and benefits  
Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an  
Dq of 40 mA, a tp of 100 s with of 20 %:  
I
Output power = 1400 W  
Power gain = 28 dB  
Efficiency = 72 %  
Easy power control  
Integrated ESD protection  
Excellent ruggedness  
High efficiency  
Excellent thermal stability  
Designed for broadband operation (HF to 128 MHz)  
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances  
(RoHS)  
1.3 Applications  
Industrial, scientific and medical applications  
Broadcast transmitter applications  

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