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BLF189XRBU PDF预览

BLF189XRBU

更新时间: 2024-11-21 22:07:43
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
14页 1361K
描述
RF MOSFET SOT539 TRAY

BLF189XRBU 数据手册

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BLF189XRB; BLF189XRBS  
Power LDMOS transistor  
Rev. 1 — 3 October 2017  
Product data sheet  
1. Product profile  
1.1 General description  
A 1900 W extremely rugged LDMOS power transistor for industrial pulsed applications in  
the HF to 150 MHz band.  
Table 1.  
Application information  
Test signal  
f
VDS  
(V)  
50  
PL  
Gp  
D  
(MHz)  
108  
(W)  
1900  
(dB)  
26  
(%)  
72.5  
pulsed RF  
1.2 Features and benefits  
Easy power control  
Integrated dual sided ESD protection enables class C operation and complete switch  
off of the transistor  
Excellent ruggedness VSWR > 65 : 1  
High efficiency  
Excellent thermal stability  
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances  
(RoHS)  
1.3 Applications  
Industrial, scientific and medical applications  

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