Datasheet > BLF184XRGJ

BLF184XRGJ

更新时间： 2024-11-21 22:07:43

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
13页	963K
描述
RF FET LDMOS 135V 23DB SOT1214C

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BLF184XRGJ 数据手册

BLF184XRG

Power LDMOS transistor

Rev. 2 — 1 September 2015

Product data sheet

1. Product profile

1.1 General description

A 700 W extremely rugged LDMOS power transistor for broadcast and industrial

applications in the HF to 600 MHz band.

Table 1.

Application information

Test signal

V_DS

(V)

P_L

G_p

_D

(MHz)

108

(W)

700

750

(dB)

23.9

23.5

(%)

73.5

81.9

pulsed RF

1.2 Features and benefits

 Easy power control

 Integrated ESD protection

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (HF to 600 MHz)

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 Industrial, scientific and medical applications

 Broadcast transmitter applications

12 3 4 5 6 7...13

中文翻译

下载PDF

与BLF184XRGJ相关器件

型号	品牌	获取价格	描述	数据表
BLF184XRGQ	ETC	获取价格	RF FET LDMOS 135V 23DB SOT1214C
BLF184XRS	NXP	获取价格	Power LDMOS transistor
BLF184XRSU	ETC	获取价格	RF FET LDMOS 135V 23DB SOT1214B
BLF184XRU	ETC	获取价格	RF FET LDMOS 135V 23DB SOT1214A
BLF188XR	NXP	获取价格	Power LDMOS transistor
BLF188XR,112	NXP	获取价格	TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, ROHS COMPLIANT, CE
BLF188XRG	NXP	获取价格	RF POWER, FET
BLF188XRGJ	ETC	获取价格	RF FET LDMOS 135V 24DB SOT1248C
BLF188XRS	NXP	获取价格	Power LDMOS transistor
BLF188XRSU	NXP	获取价格	BLF188XRS