Datasheet > BLF189XRBSU

BLF189XRBSU

更新时间： 2024-11-21 22:07:43

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
14页	1361K
描述
RF MOSFET SOT539 TRAY

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BLF189XRBSU 数据手册

BLF189XRB; BLF189XRBS

Power LDMOS transistor

Rev. 1 — 3 October 2017

Product data sheet

1. Product profile

1.1 General description

A 1900 W extremely rugged LDMOS power transistor for industrial pulsed applications in

the HF to 150 MHz band.

Table 1.

Application information

Test signal

V_DS

(V)

P_L

G_p

_D

(MHz)

108

(W)

1900

(dB)

(%)

72.5

pulsed RF

1.2 Features and benefits

 Easy power control

 Integrated dual sided ESD protection enables class C operation and complete switch

off of the transistor

 Excellent ruggedness VSWR > 65 : 1

 High efficiency

 Excellent thermal stability

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 Industrial, scientific and medical applications

12 3 4 5 6 7...14

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