Datasheet > BLF184XRS

BLF184XRS

更新时间： 2024-09-16 12:54:35

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
10页	111K
描述
Power LDMOS transistor

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数据手册

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BLF184XRS 数据手册

BLF184XR; BLF184XRS

Power LDMOS transistor

Rev. 1 — 6 May 2013

Objective data sheet

1. Product profile

1.1 General description

A 650 W extremely rugged LDMOS power transistor for broadcast and industrial

applications in the HF to 600 MHz band.

Table 1.

Application information

Test signal

V_DS

(V)

P_L

G_p

_D

(MHz)

108

(W)

650

(dB)

23.5

(%)

pulsed RF

1.2 Features and benefits

 Easy power control

 Integrated ESD protection

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (HF to 600 MHz)

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 Industrial, scientific and medical applications

 Broadcast transmitter applications

12 3 4 5 6 7...10

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