Datasheet > BLF178XR

BLF178XR

更新时间： 2024-09-16 12:32:23

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
14页	339K
描述
Power LDMOS transistor

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BLF178XR 数据手册

BLF178XR; BLF178XRS

Power LDMOS transistor

Rev. 4 — 12 July 2013

Product data sheet

1. Product profile

1.1 General description

A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial

applications in the HF to 128 MHz band.

Table 1.

Application information

Test signal

V_DS

(V)

P_L

G_p

_D

(%)

(MHz)

108

(W)

(dB)

1200

1400

pulsed RF

1.2 Features and benefits

 Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an

_Dqof 40 mA, a t_pof 100 s with  of 20 %:

 Output power = 1400 W

 Power gain = 28 dB

 Efficiency = 72 %

 Easy power control

 Integrated ESD protection

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (HF to 128 MHz)

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 Industrial, scientific and medical applications

 Broadcast transmitter applications

12 3 4 5 6 7...14

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