Datasheet > BLF178XR,112

BLF178XR,112

更新时间： 2024-11-09 22:07:43

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
14页	1178K
描述
RF FET LDMOS 110V 28DB SOT539A

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BLF178XR,112 数据手册

BLF178XR; BLF178XRS

Power LDMOS transistor

Rev. 5 — 1 September 2015

Product data sheet

1. Product profile

1.1 General description

A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial

applications in the HF to 128 MHz band.

Table 1.

Application information

Test signal

V_DS

(V)

P_L

G_p

_D

(%)

(MHz)

108

(W)

(dB)

1200

1400

pulsed RF

1.2 Features and benefits

 Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an

_Dqof 40 mA, a t_pof 100 s with  of 20 %:

 Output power = 1400 W

 Power gain = 28 dB

 Efficiency = 72 %

 Easy power control

 Integrated ESD protection

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (HF to 128 MHz)

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 Industrial, scientific and medical applications

 Broadcast transmitter applications

12 3 4 5 6 7...14

中文翻译

下载PDF

与BLF178XR,112相关器件

型号	品牌	获取价格	描述	数据表
BLF178XR112	NXP	获取价格	Power LDMOS transistor
BLF178XRS	NXP	获取价格	Power LDMOS transistor
BLF178XRS,112	ETC	获取价格	RF FET LDMOS 110V 28DB SOT539B
BLF1820-40	PHILIPS	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
BLF1820-70	NXP	获取价格	UHF power LDMOS transistor
BLF1820-90	NXP	获取价格	UHF power LDMOS transistor
BLF1820-90,112	NXP	获取价格	TRANSISTOR UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, FM-2, FET RF Power
BLF1822-10	NXP	获取价格	UHF power LDMOS transistor
BLF1822-10,112	ETC	获取价格	RF FET LDMOS 65V 13.5DB SOT467C
BLF182XR	NXP	获取价格	RF POWER TRANSISTOR