Datasheet > BLF178P,112

BLF178P,112

更新时间： 2024-11-06 22:07:43

品牌	Logo	应用领域
其他 - ETC		局域网放大器晶体管
页数	文件大小	规格书
13页	1394K
描述
RF FET LDMOS 110V 28.5DB SOT539A

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BLF178P,112 数据手册

BLF178P

Power LDMOS transistor

Rev. 3 — 1 September 2015

Product data sheet

1. Product profile

1.1 General description

A 1200 W LDMOS power transistor for broadcast applications and industrial applications

in the HF to 110 MHz band.

Table 1.

Application information

Test signal

V_DS

(V)

P_L

G_p

_D

(%)

(MHz)

108

(W)

(dB)

1000

1200

pulsed RF

28.5

1.2 Features and benefits

 Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an

_Dqof 40 mA, a t_pof 100 s with  of 20 %:

 Output power = 1200 W

 Power gain = 28.5 dB

 Efficiency = 75 %

 Easy power control

 Integrated ESD protection

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (10 MHz to 110 MHz)

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 Industrial, scientific and medical applications

 FM transmitter applications

12 3 4 5 6 7...13

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