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BDX62A PDF预览

BDX62A

更新时间: 2024-11-16 08:52:07
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 90K
描述
isc Silicon PNP Darlington Power Transistor

BDX62A 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.81

BDX62A 数据手册

 浏览型号BDX62A的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Darlington Power Transistor  
BDX62/A/B/C  
DESCRIPTION  
·Collector Current -IC= -8A  
·High DC Current Gain-hFE= 1000(Min)@ IC= -3A  
·Complement to Type BDX63/A/B/C  
APPLICATIONS  
·Designed for audio output stages and general amplifier  
and switching applications  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
PARAMETER  
VALUE  
-80  
UNIT  
BDX62  
BDX62A  
BDX62B  
BDX62C  
BDX62  
-100  
-120  
-140  
-60  
Collector-Base  
Voltage  
VCBO  
V
BDX62A  
BDX62B  
BDX62C  
-80  
Collector-Emitter  
Voltage  
VCEO  
V
-100  
-120  
-5  
VEBO  
IC  
ICM  
IB  
Emitter-Base Voltage  
V
A
Collector Current-Continuous  
Collector Current-Peak  
-8  
-12  
A
Base Current-Continuous  
-0.15  
90  
A
Collector Power Dissipation  
PC  
TJ  
W
@ TC=25℃  
Junction Temperature  
200  
Storage Temperature Range  
-65~200  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance, Junction to Case  
1.94  
/W  
Rth j-c  
isc Websitewww.iscsemi.cn  

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