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BDX64_12 PDF预览

BDX64_12

更新时间: 2024-12-01 12:53:15
品牌 Logo 应用领域
COMSET 晶体晶体管
页数 文件大小 规格书
4页 83K
描述
PNP SILICON DARLINGTON POWER TRANSISTOR

BDX64_12 数据手册

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BDX64 – A – B – C  
PNP SILICON DARLINGTON POWER TRANSISTOR  
The BDX64, BDX64A, BDX64B and BDX64C are mounted in TO-3 metal package.  
High current power darlingtons designed for power amplification and switching applications.  
The complementary NPN are BDX65, BDX65A, BDX65B, BDX65C.  
Compliance to RoHS.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCEO  
Ratings  
Value  
Unit  
BDX64  
-60  
-80  
-100  
-120  
-60  
BDX64A  
BDX64B  
BDX64C  
BDX64  
BDX64A  
BDX64B  
BDX64C  
Collector-Emitter Voltage  
Collector-EmitterVoltage  
V
-80  
VCEV  
VBE=-1.5 V  
V
-100  
-120  
-5.0  
-12  
VEBO  
IC  
Emitter-Base Voltage  
Collector Current  
V
A
IC(RMS)  
ICM  
-16  
IB  
Base Current  
0.2  
A
PT  
TJ  
TS  
Power Dissipation  
Junction Temperature  
Storage Temperature  
@ TC = 25°  
117  
W
-55 to +200  
°C  
THERMAL CHARACTERISTICS  
Symbol  
RthJ-C  
Ratings  
Value  
Unit  
Thermal Resistance, Junction to Case  
1.5  
°C/W  
24/10/2012  
COMSET SEMICONDUCTORS  
1 | 4  

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