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BDX62_12 PDF预览

BDX62_12

更新时间: 2024-11-04 12:53:11
品牌 Logo 应用领域
COMSET 晶体晶体管
页数 文件大小 规格书
4页 83K
描述
PNP SILICON DARLINGTON POWER TRANSISTOR

BDX62_12 数据手册

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BDX62 – A – B – C  
PNP SILICON DARLINGTON POWER TRANSISTOR  
The BDX62, BDX62A, BDX62B and BDX62C are mounted in TO-3 metal package.  
High current power darlingtons designed for power amplification and switching applications.  
The complementary NPN are BDX63, BDX63A, BDX63B, BDX63C.  
Compliance to RoHS.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCEO  
Ratings  
Value  
Unit  
BDX62  
-60  
-80  
-100  
-120  
-60  
BDX62A  
BDX62B  
BDX62C  
BDX62  
BDX62A  
BDX62B  
BDX62C  
Collector-Emitter Voltage  
Collector-EmitterVoltage  
V
-80  
VCEV  
VBE=-1.5 V  
V
-100  
-120  
-5.0  
-8  
VEBO  
IC  
Emitter-Base Voltage  
Collector Current  
V
A
IC(RMS)  
ICM  
-12  
IB  
Base Current  
-0.15  
90  
A
W
PT  
TJ  
TS  
Power Dissipation  
Junction Temperature  
Storage Temperature  
@ TC = 25°  
-55 to +200  
°C  
THERMAL CHARACTERISTICS  
Symbol  
Ratings  
Value  
Unit  
RthJ-C  
Thermal Resistance, Junction to Case  
1.94  
°C/W  
24/10/2012  
COMSET SEMICONDUCTORS  
1 | 4  

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