5秒后页面跳转
BD437TG PDF预览

BD437TG

更新时间: 2024-11-28 08:51:23
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
4页 61K
描述
Plastic Medium Power Silicon NPN Transistor

BD437TG 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:TO-225AA包装说明:ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:1.18
最大集电极电流 (IC):4 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-225AAJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):36 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):3 MHz
Base Number Matches:1

BD437TG 数据手册

 浏览型号BD437TG的Datasheet PDF文件第2页浏览型号BD437TG的Datasheet PDF文件第3页浏览型号BD437TG的Datasheet PDF文件第4页 
BD435, BD437, BD439,  
BD441  
Plastic Medium Power  
Silicon NPN Transistor  
This series of plastic, medium−power silicon NPN transistors can be  
used for amplifier and switching applications. Complementary types  
are BD438 and BD442.  
http://onsemi.com  
4.0 AMPERES  
POWER TRANSISTORS  
NPN SILICON  
Features  
Pb−Free Packages are Available*  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
TO−225AA  
CASE 77  
STYLE 1  
Collector−Emitter Voltage  
BD435  
BD437  
BD439  
BD441  
V
CEO  
V
CBO  
V
EBO  
32  
45  
60  
80  
Vdc  
3
2
1
Collector−Base Voltage  
BD435  
BD437  
BD439  
BD441  
32  
45  
60  
80  
Vdc  
MARKING DIAGRAM  
Emitter−Base Voltage  
Collector Current  
Base Current  
5.0  
4.0  
1.0  
Vdc  
Adc  
Adc  
YWW  
BD4xxG  
I
C
I
B
BD4xx = Device Code  
xx = 35, 37, 37T, 39, 41  
Total Device Dissipation @ T = 25°C  
P
36  
288  
W
W/°C  
C
D
Derate above 25°C  
Y
= Year  
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
WW  
G
= Work Week  
= Pb−Free Package  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
ORDERING INFORMATION  
Symbol  
Max  
Unit  
Device  
Package  
Shipping  
Thermal Resistance, Junction−to−Case  
q
3.5  
°C/W  
JC  
BD435  
TO−225AA  
500 Units/Box  
500 Units/Box  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
BD435G  
TO−225AA  
(Pb−Free)  
BD437  
TO−225AA  
500 Units/Box  
500 Units/Box  
BD437G  
TO−225AA  
(Pb−Free)  
BD437T  
TO−225AA  
50 Units/Rail  
50 Units/Rail  
BD437TG  
TO−225AA  
(Pb−Free)  
BD439  
TO−225AA  
500 Units/Box  
500 Units/Box  
BD439G  
TO−225AA  
(Pb−Free)  
BD441  
TO−225AA  
500 Units/Box  
500 Units/Box  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
BD441G  
TO−225AA  
(Pb−Free)  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
October, 2005− Rev. 14  
BD437/D  

BD437TG 替代型号

型号 品牌 替代类型 描述 数据表
BD437T ONSEMI

完全替代

Plastic Medium Power Silicon NPN Transistor
BD437G ONSEMI

完全替代

Plastic Medium Power Silicon NPN Transistor
BD437 ONSEMI

完全替代

POWER TRANSISTORS NPN SILICON

与BD437TG相关器件

型号 品牌 获取价格 描述 数据表
BD438 SECOS

获取价格

Plastic Encapsulate Transistors
BD438 MCC

获取价格

PNP Silicon Power Transistors
BD438 COMSET

获取价格

SILICON PNP POWER TRANSISTORS
BD438 TYSEMI

获取价格

Medium Power Linear and Switching Applications Base Current IB -1 A
BD438 SAVANTIC

获取价格

Silicon PNP Power Transistors
BD438 ISC

获取价格

Silicon PNP Power Transistors
BD438 INFINEON

获取价格

PNP SILICON EPIBASE TRANSISTORS
BD438 TRSYS

获取价格

EPITAXIAL SILICON POWER TRANSISTORS
BD438 MOTOROLA

获取价格

Plastic Medium Power Silicon PNP Transistor
BD438 ONSEMI

获取价格

POWER TRANSISTORS PNP SILICON