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BD437T PDF预览

BD437T

更新时间: 2024-11-28 04:09:11
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
1页 55K
描述
Plastic Medium Power Silicon NPN Transistor

BD437T 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TO-225AA包装说明:PLASTIC, CASE 77-09, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.14
Is Samacsys:N最大集电极电流 (IC):4 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):40JEDEC-95代码:TO-225AA
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):240极性/信道类型:NPN
最大功率耗散 (Abs):36 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHzBase Number Matches:1

BD437T 数据手册

  
Transys  
Electronics  
L
I M I T E D  
TO-126 Plastic-Encapsulated Transistors  
BD433/435/437 TRANSISTOR (NPN)  
TO-126  
FEATURES  
Power dissipation  
PCM:  
1.25  
W (Tamb=25)  
1. EMITTER  
2. COLLECTOR  
3. BASE  
Collector current  
ICM:  
4
A
1 2 3  
Collector-base voltage  
V(BR)CBO  
:
BD433  
22 V  
BD435 32 V  
BD437 45 V  
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
Test conditions  
MIN  
TYP  
MAX  
UNIT  
BD433  
22  
32  
45  
22  
32  
45  
5
V(BR)CBO  
V
Collector-base breakdown voltage  
Ic=100µA, IE=0  
BD435  
BD437  
BD433  
V(BR)CEO  
V(BR)EBO  
ICBO  
V
V
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
Ic=100mA, IB=0  
BD435  
BD437  
IE=100µA, IC=0  
CB=22V, IE=0  
V
BD433  
BD435  
VCB=32V, IE=0  
VCB=45V, IE=0  
µA  
1
BD437  
BD433  
BD435  
VCE=22V, IE=0  
ICEO  
VCE=32V, IE=0  
VCE=45V, IE=0  
VEB=5V, IE=0  
µA  
µA  
Collector cut-off current  
Emitter cut-off current  
10  
1
BD437  
IEBO  
hFE(1)  
V
CE=1V, IC=500mA  
85  
40  
30  
50  
40  
V
CE=5V, IC=10mA BD433/BD435  
BD437  
hFE(2)  
DC current gain  
V
CE=1V, IC=2A  
BD433/BD435  
BD437  
hFE(3)  
IC=2A, IB=0.2A  
BD433/BD435  
BD437  
0.5  
0.6  
1.1  
1.2  
VCE(sat)  
V
Collector-emitter saturation voltage  
VCE=1V, IC=2A  
BD433/BD435  
BD437  
VBE  
V
Base-emitter voltage  
Transition frequency  
3
MHz  
fT  
VCE=1V, IC=250mA  

BD437T 替代型号

型号 品牌 替代类型 描述 数据表
BD437TG ONSEMI

完全替代

Plastic Medium Power Silicon NPN Transistor
BD437G ONSEMI

完全替代

Plastic Medium Power Silicon NPN Transistor
BD437 ONSEMI

完全替代

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