5秒后页面跳转
BD245 PDF预览

BD245

更新时间: 2024-11-26 04:09:11
品牌 Logo 应用领域
伯恩斯 - BOURNS 晶体晶体管
页数 文件大小 规格书
5页 108K
描述
NPN SILICON POWER TRANSISTORS

BD245 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.43
外壳连接:COLLECTOR最大集电极电流 (IC):10 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):4JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BD245 数据手册

 浏览型号BD245的Datasheet PDF文件第2页浏览型号BD245的Datasheet PDF文件第3页浏览型号BD245的Datasheet PDF文件第4页浏览型号BD245的Datasheet PDF文件第5页 
BD245, BD245A, BD245B, BD245C  
NPN SILICON POWER TRANSISTORS  
Designed for Complementary Use with the  
BD246 Series  
SOT-93 PACKAGE  
(TOP VIEW)  
80 W at 25°C Case Temperature  
10 A Continuous Collector Current  
15 A Peak Collector Current  
B
C
E
1
2
3
Customer-Specified Selections Available  
Pin 2 is in electrical contact with the mounting base.  
MDTRAAA  
absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
BD245  
55  
BD245A  
BD245B  
BD245C  
BD245  
70  
Collector-emitter voltage (RBE = 100 )  
VCER  
V
90  
115  
45  
BD245A  
BD245B  
BD245C  
60  
Collector-emitter voltage (IC = 30 mA)  
VCEO  
V
80  
100  
Emitter-base voltage  
VEBO  
IC  
ICM  
IB  
5
V
A
Continuous collector current  
Peak collector current (see Note 1)  
Continuous base current  
10  
15  
A
3
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)  
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)  
Unclamped inductive load energy (see Note 4)  
Ptot  
Ptot  
80  
3
W
W
mJ  
°C  
°C  
°C  
2
½LIC  
62.5  
Operating junction temperature range  
Tj  
Tstg  
TL  
-65 to +150  
-65 to +150  
250  
Storage temperature range  
Lead temperature 3.2 mm from case for 10 seconds  
NOTES: 1. This value applies for tp 0.3 ms, duty cycle 10%.  
2. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.  
3. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.  
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 ,  
BE(off) = 0, RS = 0.1 , VCC = 20 V.  
V
JUNE 1973 - REVISED SEPTEMBER 2002  
Specifications are subject to change without notice.  
1

BD245 替代型号

型号 品牌 替代类型 描述 数据表
BD245-S BOURNS

功能相似

Power Bipolar Transistor, 10A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,

与BD245相关器件

型号 品牌 获取价格 描述 数据表
BD245A POINN

获取价格

NPN SILICON POWER TRANSISTORS
BD245A BOURNS

获取价格

NPN SILICON POWER TRANSISTORS
BD245A ISC

获取价格

isc Silicon NPN Power Transistor
BD245A SAVANTIC

获取价格

Silicon NPN Power Transistors
BD245A COMSET

获取价格

NPN SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS
BD245A NJSEMI

获取价格

Trans GP BJT NPN 60V 10A 3-Pin(3+Tab) SOT-93
BD245A-S BOURNS

获取价格

Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
BD245B ISC

获取价格

isc Silicon NPN Power Transistor
BD245B BOURNS

获取价格

NPN SILICON POWER TRANSISTORS
BD245B POINN

获取价格

NPN SILICON POWER TRANSISTORS