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BD245

更新时间: 2024-11-03 04:09:11
品牌 Logo 应用领域
伯恩斯 - BOURNS 晶体晶体管
页数 文件大小 规格书
5页 108K
描述
NPN SILICON POWER TRANSISTORS

BD245 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.43
外壳连接:COLLECTOR最大集电极电流 (IC):10 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):4JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BD245 数据手册

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BD245, BD245A, BD245B, BD245C  
NPN SILICON POWER TRANSISTORS  
Designed for Complementary Use with the  
BD246 Series  
SOT-93 PACKAGE  
(TOP VIEW)  
80 W at 25°C Case Temperature  
10 A Continuous Collector Current  
15 A Peak Collector Current  
B
C
E
1
2
3
Customer-Specified Selections Available  
Pin 2 is in electrical contact with the mounting base.  
MDTRAAA  
absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
BD245  
55  
BD245A  
BD245B  
BD245C  
BD245  
70  
Collector-emitter voltage (RBE = 100 )  
VCER  
V
90  
115  
45  
BD245A  
BD245B  
BD245C  
60  
Collector-emitter voltage (IC = 30 mA)  
VCEO  
V
80  
100  
Emitter-base voltage  
VEBO  
IC  
ICM  
IB  
5
V
A
Continuous collector current  
Peak collector current (see Note 1)  
Continuous base current  
10  
15  
A
3
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)  
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)  
Unclamped inductive load energy (see Note 4)  
Ptot  
Ptot  
80  
3
W
W
mJ  
°C  
°C  
°C  
2
½LIC  
62.5  
Operating junction temperature range  
Tj  
Tstg  
TL  
-65 to +150  
-65 to +150  
250  
Storage temperature range  
Lead temperature 3.2 mm from case for 10 seconds  
NOTES: 1. This value applies for tp 0.3 ms, duty cycle 10%.  
2. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.  
3. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.  
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 ,  
BE(off) = 0, RS = 0.1 , VCC = 20 V.  
V
JUNE 1973 - REVISED SEPTEMBER 2002  
Specifications are subject to change without notice.  
1

BD245 替代型号

型号 品牌 替代类型 描述 数据表
BD245-S BOURNS

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