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BD246 PDF预览

BD246

更新时间: 2024-11-03 12:50:15
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 157K
描述
isc Silicon PNP Power Transistor

BD246 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.55
最大集电极电流 (IC):10 A配置:Single
最小直流电流增益 (hFE):4最高工作温度:150 °C
极性/信道类型:PNP最大功率耗散 (Abs):80 W
子类别:Other Transistors表面贴装:NO
Base Number Matches:1

BD246 数据手册

 浏览型号BD246的Datasheet PDF文件第2页浏览型号BD246的Datasheet PDF文件第3页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Power Transistor  
BD246/A/B/C  
DESCRIPTION  
·Collector Current -IC= -10A  
·Collector-Emitter Breakdown Voltage-  
: V(BR)CEO = -45V(Min)- BD246; -60V(Min)- BD246A  
-80V(Min)- BD246B; -100V(Min)- BD246C  
·Complement to Type BD245/A/B/C  
APPLICATIONS  
·Designed for use in general purpose power amplifier and  
switching applications  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
PARAMETER  
VALUE  
-55  
UNIT  
BD246  
BD246A  
BD246B  
BD246C  
BD246  
-70  
Collector-Emitter  
Voltage (RBE= 100Ω)  
VCER  
V
-90  
-115  
-45  
BD246A  
BD246B  
BD246C  
-60  
Collector-Emitter  
Voltage  
VCEO  
V
-80  
-100  
-5  
VEBO  
IC  
ICM  
IB  
Emitter-Base Voltage  
V
A
A
A
Collector Current-Continuous  
Collector Current-Peak  
Base Current  
-10  
-15  
-3  
Collector Power Dissipation  
@ Ta=25℃  
Collector Power Dissipation  
@ TC=25℃  
3
PC  
W
80  
TJ  
Junction Temperature  
150  
-65~150  
Storage Temperature Range  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance, Junction to Case  
1.56  
/W  
Rth j-c  
isc Websitewww.iscsemi.cn  

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