BD245B

更新时间： 2024-11-26 04:09:11

品牌	Logo	应用领域
伯恩斯 - BOURNS		晶体晶体管
页数	文件大小	规格书
5页	108K
描述
NPN SILICON POWER TRANSISTORS

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

BD245B 数据手册

BD245, BD245A, BD245B, BD245C

NPN SILICON POWER TRANSISTORS

●

Designed for Complementary Use with the

BD246 Series

SOT-93 PACKAGE

(TOP VIEW)

●

80 W at 25°C Case Temperature

10 A Continuous Collector Current

15 A Peak Collector Current

Customer-Specified Selections Available

Pin 2 is in electrical contact with the mounting base.

MDTRAAA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

BD245

BD245A

BD245B

BD245C

BD245

Collector-emitter voltage (R_BE= 100 Ω)

V_CER

115

BD245A

BD245B

BD245C

Collector-emitter voltage (I_C= 30 mA)

V_CEO

100

Emitter-base voltage

V_EBO

I_C

I_CM

I_B

Continuous collector current

Peak collector current (see Note 1)

Continuous base current

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Unclamped inductive load energy (see Note 4)

P_tot

°C

½LI_C

62.5

Operating junction temperature range

T_j

T_stg

T_L

-65 to +150

250

Storage temperature range

Lead temperature 3.2 mm from case for 10 seconds

NOTES: 1. This value applies for t_p≤ 0.3 ms, duty cycle ≤ 10%.

2. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I_B(on)= 0.4 A, R_BE= 100 Ω,

_BE(off)= 0, R_S= 0.1 Ω, V_CC= 20 V.

JUNE 1973 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

12 3 4 5

中文翻译

下载PDF

BD245B 替代型号

型号	品牌	替代类型	描述	数据表
BD245B-S	BOURNS	类似代替	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,

与BD245B相关器件

型号	品牌	获取价格	描述	数据表
BD245B-S	BOURNS	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
BD245C	POINN	获取价格	NPN SILICON POWER TRANSISTORS
BD245C	BOURNS	获取价格	NPN SILICON POWER TRANSISTORS
BD245C	SAVANTIC	获取价格	Silicon NPN Power Transistors
BD245C	ISC	获取价格	isc Silicon NPN Power Transistor
BD245C	COMSET	获取价格	NPN SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS
BD245C	NJSEMI	获取价格	Trans GP BJT NPN 100V 10A 3-Pin(3+Tab) SOT-93
BD245C-S	BOURNS	获取价格	Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
BD245-S	BOURNS	获取价格	Power Bipolar Transistor, 10A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
BD246	COMSET	获取价格	PNP SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS