Datasheet > BD246

BD246

更新时间： 2024-11-02 22:48:19

品牌	Logo	应用领域
POINN		晶体晶体管
页数	文件大小	规格书
6页	94K
描述
PNP SILICON POWER TRANSISTORS

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BD246 数据手册

BD246, BD246A, BD246B, BD246C

PNP SILICON POWER TRANSISTORS

JUNE 1973 - REVISED MARCH 1997

●

Designed for Complementary Use with the

BD245 Series

SOT-93 PACKAGE

(TOP VIEW)

●

80 W at 25°C Case Temperature

10 A Continuous Collector Current

15 A Peak Collector Current

Customer-Specified Selections Available

Pin 2 is in electrical contact with the mounting base.

MDTRAA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

BD246

-55

BD246A

BD246B

BD246C

BD246

-70

Collector-emitter voltage (R_BE= 100 W)

V_CER

-90

-115

-45

BD246A

BD246B

BD246C

-60

Collector-emitter voltage (I_C= -30 mA)

V_CEO

-80

-100

Emitter-base voltage

V_EBO

I_C

I_CM

I_B

-5

Continuous collector current

Peak collector current (see Note 1)

Continuous base current

-10

-15

-3

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Unclamped inductive load energy (see Note 4)

P_tot

°C

½LI_C

62.5

Operating junction temperature range

T_j

T_stg

T_L

-65 to +150

250

Storage temperature range

Lead temperature 3.2 mm from case for 10 seconds

NOTES: 1. This value applies for t_p£ 0.3 ms, duty cycle £ 10%.

2. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I_B(on)= -0.4 A, R_BE= 100 W,

V_BE(off)= 0, R_S= 0.1 W, V_CC= -20 V.

P R O D U C T

I N F O R M A T I O N

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6

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