5秒后页面跳转
捷配首页

Datasheet > BD249
BD249 PDF预览

BD249

更新时间： 2024-11-25 22:48:19
品牌 Logo 应用领域
POINN 晶体晶体管
页数 文件大小 规格书
6页 97K
描述
NPN SILICON POWER TRANSISTORS

阅读下载

中文翻译

获取价格

BD249 技术参数

生命周期：Transferred包装说明：FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.29.00.95风险等级：5.83
外壳连接：COLLECTOR最大集电极电流 (IC)：25 A
集电极-发射极最大电压：45 V配置：SINGLE
最小直流电流增益 (hFE)：5JESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：NPN
认证状态：Not Qualified表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON

BD249 数据手册

 浏览型号BD249的Datasheet PDF文件第2页浏览型号BD249的Datasheet PDF文件第3页浏览型号BD249的Datasheet PDF文件第4页浏览型号BD249的Datasheet PDF文件第5页浏览型号BD249的Datasheet PDF文件第6页 
BD249, BD249A, BD249B, BD249C  
NPN SILICON POWER TRANSISTORS  
Copyright © 1997, Power Innovations Limited, UK  
JUNE 1973 - REVISED MARCH 1997  
●
Designed for Complementary Use with the  
BD250 Series  
SOT-93 PACKAGE  
(TOP VIEW)  
●
●
●
●
125 W at 25°C Case Temperature  
25 A Continuous Collector Current  
40 A Peak Collector Current  
B
C
E
1
2
3
Customer-Specified Selections Available  
Pin 2 is in electrical contact with the mounting base.  
MDTRAA  
absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
BD249  
55  
BD249A  
BD249B  
BD249C  
BD249  
70  
Collector-emitter voltage (RBE = 100 W)  
VCER  
V
90  
115  
45  
BD249A  
BD249B  
BD249C  
60  
Collector-emitter voltage (IC = 30 mA)  
VCEO  
V
80  
100  
Emitter-base voltage  
VEBO  
IC  
ICM  
IB  
5
V
A
Continuous collector current  
Peak collector current (see Note 1)  
Continuous base current  
25  
40  
A
5
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)  
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)  
Unclamped inductive load energy (see Note 4)  
Ptot  
Ptot  
125  
3
W
W
mJ  
°C  
°C  
°C  
2
½LIC  
90  
Operating junction temperature range  
Tj  
Tstg  
TL  
-65 to +150  
-65 to +150  
250  
Storage temperature range  
Lead temperature 3.2 mm from case for 10 seconds  
NOTES: 1. This value applies for tp £ 0.3 ms, duty cycle £ 10%.  
2. Derate linearly to 150°C case temperature at the rate of 1 W/°C.  
3. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.  
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 W,  
VBE(off) = 0, RS = 0.1 W, VCC = 20 V.  
P R O D U C T  
I N F O R M A T I O N  
Information is current as of publication date. Products conform to specifications in accordance  
with the terms of Power Innovations standard warranty. Production processing does not  
necessarily include testing of all parameters.  
1
123456

中文翻译

下载PDF

与BD249相关器件

型号 品牌 获取价格 描述 数据表
BD249A POINN

获取价格

 		NPN SILICON POWER TRANSISTORS
BD249A BOURNS

获取价格

 		NPN SILICON POWER TRANSISTORS
BD249A SAVANTIC

获取价格

 		Silicon NPN Power Transistors
BD249A ISC

获取价格

 		Silicon NPN Power Transistors
BD249A MOSPEC

获取价格

 		POWER TRANSISTORS(25A,125W)
BD249A NJSEMI

获取价格

 		Trans GP BJT NPN 60V 25A 3-Pin(3+Tab) SOT-93
BD249A-S BOURNS

获取价格

 		Power Bipolar Transistor, 25A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
BD249B MOSPEC

获取价格

 		POWER TRANSISTORS(25A,125W)
BD249B POINN

获取价格

 		NPN SILICON POWER TRANSISTORS
BD249B SAVANTIC

获取价格

 		Silicon NPN Power Transistors

与BD249相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证