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BD249

更新时间： 2024-11-02 22:48:19
品牌 Logo 应用领域
POINN 晶体晶体管
页数 文件大小 规格书
6页 97K
描述
NPN SILICON POWER TRANSISTORS

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中文翻译

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BD249 技术参数

生命周期：Transferred包装说明：FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.29.00.95风险等级：5.83
外壳连接：COLLECTOR最大集电极电流 (IC)：25 A
集电极-发射极最大电压：45 V配置：SINGLE
最小直流电流增益 (hFE)：5JESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：NPN
认证状态：Not Qualified表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON

BD249 数据手册

 浏览型号BD249的Datasheet PDF文件第2页浏览型号BD249的Datasheet PDF文件第3页浏览型号BD249的Datasheet PDF文件第4页浏览型号BD249的Datasheet PDF文件第5页浏览型号BD249的Datasheet PDF文件第6页 
BD249, BD249A, BD249B, BD249C  
NPN SILICON POWER TRANSISTORS  
Copyright © 1997, Power Innovations Limited, UK  
JUNE 1973 - REVISED MARCH 1997  
●
Designed for Complementary Use with the  
BD250 Series  
SOT-93 PACKAGE  
(TOP VIEW)  
●
●
●
●
125 W at 25°C Case Temperature  
25 A Continuous Collector Current  
40 A Peak Collector Current  
B
C
E
1
2
3
Customer-Specified Selections Available  
Pin 2 is in electrical contact with the mounting base.  
MDTRAA  
absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
BD249  
55  
BD249A  
BD249B  
BD249C  
BD249  
70  
Collector-emitter voltage (RBE = 100 W)  
VCER  
V
90  
115  
45  
BD249A  
BD249B  
BD249C  
60  
Collector-emitter voltage (IC = 30 mA)  
VCEO  
V
80  
100  
Emitter-base voltage  
VEBO  
IC  
ICM  
IB  
5
V
A
Continuous collector current  
Peak collector current (see Note 1)  
Continuous base current  
25  
40  
A
5
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)  
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)  
Unclamped inductive load energy (see Note 4)  
Ptot  
Ptot  
125  
3
W
W
mJ  
°C  
°C  
°C  
2
½LIC  
90  
Operating junction temperature range  
Tj  
Tstg  
TL  
-65 to +150  
-65 to +150  
250  
Storage temperature range  
Lead temperature 3.2 mm from case for 10 seconds  
NOTES: 1. This value applies for tp £ 0.3 ms, duty cycle £ 10%.  
2. Derate linearly to 150°C case temperature at the rate of 1 W/°C.  
3. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.  
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 W,  
VBE(off) = 0, RS = 0.1 W, VCC = 20 V.  
P R O D U C T  
I N F O R M A T I O N  
Information is current as of publication date. Products conform to specifications in accordance  
with the terms of Power Innovations standard warranty. Production processing does not  
necessarily include testing of all parameters.  
1
123456

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