BD249B-S

更新时间： 2024-01-11 04:57:29

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伯恩斯 - BOURNS		晶体晶体管
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BD249B-S 数据手册

BD249, BD249A, BD249B, BD249C

NPN SILICON POWER TRANSISTORS

●

Designed for Complementary Use with the

BD250 Series

SOT-93 PACKAGE

(TOP VIEW)

●

125 W at 25°C CaseTemperature

25 A Continuous Collector Current

40 A Peak Collector Current

Customer-Specified Selections Available

Pin 2 is in electrical contact with the mounting base.

MDTRAAA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

BD249

BD249A

BD249B

BD249C

BD249

Collector-emitter voltage (R_BE= 100 Ω)

V_CER

115

BD249A

BD249B

BD249C

Collector-emitter voltage (I_C= 30 mA)

V_CEO

100

Emitter-base voltage

V_EBO

I_C

I_CM

I_B

Continuous collector current

Peak collector current (see Note 1)

Continuous base current

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Unclamped inductive load energy (see Note 4)

P_tot

125

°C

½LI_C

Operating junction temperature range

T_j

T_stg

T_L

-65 to +150

250

Storage temperature range

Lead temperature 3.2 mm from case for 10 seconds

NOTES: 1. This value applies for t_p≤ 0.3 ms, duty cycle ≤ 10%.

2. Derate linearly to 150°C case temperature at the rate of 1 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I_B(on)= 0.4 A, R_BE= 100 Ω,

_BE(off)= 0, R_S= 0.1 Ω, V_CC= 20 V.

JUNE 1973 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

12 3 4 5

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BD249B-S 替代型号

型号	品牌	替代类型	描述	数据表
BD249B	BOURNS	功能相似	NPN SILICON POWER TRANSISTORS

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