BD249C

更新时间： 2024-11-26 06:41:51

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管开关局域网
页数	文件大小	规格书
3页	121K
描述
Silicon NPN Power Transistors

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中文翻译

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数据手册

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BD249C 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BD249/A/B/C

DESCRIPTION

·With TO-3PN package

·Complement to type BD250/A/B/C

·125 W at 25°C case temperature

·25 A continuous collector current

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Emitter

Fig.1 simplified outline (TO-3PN) and symbol

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

BD249

BD249A

BD249B

BD249C

BD249

V_CEO

Collector-emitter voltage

Open base

100

BD249A

BD249B

BD249C

V_CBO

Collector-base voltage

115

V_EBO

I_C

I_CM

I_B

Emitter-base voltage

Collector current

Open collector

Collector current-peak

Base current

P_C

T_j

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

125

-65~150

℃

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Thermal resistance junction to case

VALUE

UNIT

R_{th j-c}

1.0

℃/W

12 3

中文翻译

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与BD249C相关器件

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