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BD249C PDF预览

BD249C

更新时间: 2024-11-03 06:41:51
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无锡固电 - ISC 晶体晶体管开关局域网
页数 文件大小 规格书
3页 121K
描述
Silicon NPN Power Transistors

BD249C 数据手册

 浏览型号BD249C的Datasheet PDF文件第2页浏览型号BD249C的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BD249/A/B/C  
DESCRIPTION  
·With TO-3PN package  
·Complement to type BD250/A/B/C  
·125 W at 25°C case temperature  
·25 A continuous collector current  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
Fig.1 simplified outline (TO-3PN) and symbol  
Absolute maximum ratings(Ta=)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
45  
UNIT  
BD249  
BD249A  
BD249B  
BD249C  
BD249  
60  
VCEO  
Collector-emitter voltage  
Open base  
Open base  
V
80  
100  
55  
BD249A  
BD249B  
BD249C  
70  
VCBO  
Collector-base voltage  
V
90  
115  
5
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current  
Open collector  
V
A
25  
Collector current-peak  
Base current  
40  
A
5
A
PC  
Tj  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC=25  
125  
-65~150  
-65~150  
W
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
Thermal resistance junction to case  
VALUE  
UNIT  
Rth j-c  
1.0  
/W  

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