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BD250 PDF预览

BD250

更新时间: 2024-01-02 11:53:03
品牌 Logo 应用领域
SAVANTIC 晶体晶体管开关PC局域网
页数 文件大小 规格书
3页 145K
描述
Silicon PNP Power Transistors

BD250 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.2
外壳连接:COLLECTOR最大集电极电流 (IC):25 A
集电极-发射极最大电压:100 V配置:SINGLE
最小直流电流增益 (hFE):5JESD-30 代码:R-PSFM-T3
JESD-609代码:e1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):125 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BD250 数据手册

 浏览型号BD250的Datasheet PDF文件第2页浏览型号BD250的Datasheet PDF文件第3页 
SavantIC Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
BD250/A/B/C  
DESCRIPTION  
·With TO-3PN package  
·Complement to type BD249/A/B/C  
·125 W at 25°C case temperature  
·25 A continuous collector current  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
Fig.1 simplified outline (TO-3PN) and symbol  
3
Emitter  
Absolute maximum ratings(Ta=ꢀ )  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
-55  
UNIT  
BD246  
BD246A  
BD246B  
BD246C  
BD246  
-70  
VCBO  
Collector-base voltage  
Collector emitter  
V
-90  
-115  
-45  
BD246A  
BD246B  
BD246C  
-60  
VCEO  
Collector-emitter voltage  
Open base  
V
-80  
-100  
-5  
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current  
Open collector  
V
A
A
A
W
-25  
Collector current-peak  
Base current  
-40  
-5  
PC  
Tj  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC=25ꢀ  
125  
-65~150  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Rth j-c  
Thermal resistance junction to case  
1
/W  

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