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BD249-S PDF预览

BD249-S

更新时间: 2024-11-26 12:53:27
品牌 Logo 应用领域
伯恩斯 - BOURNS 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
4页 114K
描述
NPN SILICON POWER TRANSISTORS

BD249-S 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:PLASTIC, FM-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.68
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):25 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):5
JESD-30 代码:R-PSFM-T3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):125 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BD249-S 数据手册

 浏览型号BD249-S的Datasheet PDF文件第2页浏览型号BD249-S的Datasheet PDF文件第3页浏览型号BD249-S的Datasheet PDF文件第4页 
BD249, BD249A, BD249B, BD249C  
NPN SILICON POWER TRANSISTORS  
Designed for Complementary Use with the  
BD250 Series  
SOT-93 PACKAGE  
(TOP VIEW)  
125 W at 25°C CaseTemperature  
25 A Continuous Collector Current  
40 A Peak Collector Current  
B
C
E
1
2
3
Customer-Specified Selections Available  
Pin 2 is in electrical contact with the mounting base.  
MDTRAAA  
absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
BD249  
55  
BD249A  
BD249B  
BD2
BD249  
70  
Collector-emitter voltage (RBE = 100 )  
VCER  
V
90  
115  
45  
BD249A  
BD249B  
D249C  
60  
Collector-emitter voltage (IC = 30 mA)  
VCEO  
V
80  
100  
Emitter-base voltage  
VEBO  
IC  
ICM  
IB  
5
V
A
Continuous collector current  
Peak collector current (see Note 1)  
Continuous base current  
25  
40  
A
5
A
Continuous device dissipation at (or bel25castemperature (see Note 2)  
Continuous device dissipation at (elo5°C e air temperature (see Note 3)  
Unclamped inductive load eny (sNot
Ptot  
Ptot  
125  
3
W
W
mJ  
°C  
°C  
°C  
2
½LIC  
90  
Operating junction temperaturnge  
Tj  
Tstg  
TL  
-65 to +150  
-65 to +150  
250  
Storage temperature range  
Lead temperature 3.2 mm from case for 10 seconds  
NOTES: 1. This value applies for tp 0.3 ms, duty cycle 10%.  
2. Derate linearly to 150°C case temperature at the rate of 1 W/°C.  
3. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.  
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 ,  
BE(off) = 0, RS = 0.1 , VCC = 20 V.  
V
JUNE 1973 - REVISED SEPTEMBER 2002  
Specifications are subject to change without notice.  
1

BD249-S 替代型号

型号 品牌 替代类型 描述 数据表
BD249 BOURNS

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