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BD249C PDF预览

BD249C

更新时间: 2024-11-03 08:51:19
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管开关局域网
页数 文件大小 规格书
6页 190K
描述
NPN High−Power Transistor

BD249C 技术参数

是否无铅: 含铅生命周期:End Of Life
零件包装代码:TO-218包装说明:PLASTIC, CASE 340D-02, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.22
外壳连接:COLLECTOR最大集电极电流 (IC):25 A
集电极-发射极最大电压:100 V配置:SINGLE
最小直流电流增益 (hFE):5JEDEC-95代码:TO-218
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:140 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):240极性/信道类型:NPN
最大功率耗散 (Abs):3 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHzBase Number Matches:1

BD249C 数据手册

 浏览型号BD249C的Datasheet PDF文件第2页浏览型号BD249C的Datasheet PDF文件第3页浏览型号BD249C的Datasheet PDF文件第4页浏览型号BD249C的Datasheet PDF文件第5页浏览型号BD249C的Datasheet PDF文件第6页 
BD249C  
NPN High−Power Transistor  
NPN highpower transistors are for generalpurpose power  
amplifier and switching applications.  
Features  
ESD Ratings:  
Machine Model, C; > 400 V  
Human Body Model, 3B; > 8000 V  
http://onsemi.com  
Epoxy Meets UL 94 V0 @ 0.125  
PbFree Package is Available*  
25 AMP, 100 VOLT, 125 WATT  
NPN SILICON  
POWER TRANSISTOR  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
100  
100  
5.0  
Unit  
Vdc  
Vdc  
Vdc  
Collector Emitter Voltage  
Collector Base Voltage  
Emitter Base Voltage  
V
CEO  
V
CBO  
V
EBO  
TO218  
CASE 340D  
STYLE 1  
Collector Current −  
Continuous  
Peak (Note 1)  
I
C
1
25  
40  
Adc  
Apk  
2
3
Base Current Continuous  
I
5.0  
Adc  
B
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
125  
1.0  
W
W/°C  
C
MARKING DIAGRAM  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to +150  
°C  
J
stg  
Unclamped Inductive Load  
THERMAL CHARACTERISTICS  
Characteristic  
E
90  
mJ  
SB  
Symbol  
Max  
Unit  
AYWWG  
BD249C  
Thermal Resistance,  
JunctiontoCase  
R
1.0  
°C/W  
q
JC  
Thermal Resistance,  
R
35.7  
°C/W  
q
JA  
JunctiontoAmbient  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.  
BD249C = Device Code  
A
Y
= Assembly Location  
= Year  
WW  
G
= Work Week  
= PbFree Package  
ORDERING INFORMATION  
Device  
Package  
Shipping  
BD249C  
TO218  
30 Units/Rail  
30 Units/Rail  
BD249CG  
TO218  
(PbFree)  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
August, 2006 Rev. 2  
BD249C/D  
 

BD249C 替代型号

型号 品牌 替代类型 描述 数据表
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