Datasheet > BD249B

BD249B

更新时间： 2024-11-02 22:48:19

品牌	Logo	应用领域
POINN		晶体晶体管
页数	文件大小	规格书
6页	97K
描述
NPN SILICON POWER TRANSISTORS

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BD249B 数据手册

BD249, BD249A, BD249B, BD249C

NPN SILICON POWER TRANSISTORS

JUNE 1973 - REVISED MARCH 1997

●

Designed for Complementary Use with the

BD250 Series

SOT-93 PACKAGE

(TOP VIEW)

●

125 W at 25°C Case Temperature

25 A Continuous Collector Current

40 A Peak Collector Current

Customer-Specified Selections Available

Pin 2 is in electrical contact with the mounting base.

MDTRAA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

BD249

BD249A

BD249B

BD249C

BD249

Collector-emitter voltage (R_BE= 100 W)

V_CER

115

BD249A

BD249B

BD249C

Collector-emitter voltage (I_C= 30 mA)

V_CEO

100

Emitter-base voltage

V_EBO

I_C

I_CM

I_B

Continuous collector current

Peak collector current (see Note 1)

Continuous base current

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Unclamped inductive load energy (see Note 4)

P_tot

125

°C

½LI_C

Operating junction temperature range

T_j

T_stg

T_L

-65 to +150

250

Storage temperature range

Lead temperature 3.2 mm from case for 10 seconds

NOTES: 1. This value applies for t_p£ 0.3 ms, duty cycle £ 10%.

2. Derate linearly to 150°C case temperature at the rate of 1 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I_B(on)= 0.4 A, R_BE= 100 W,

V_BE(off)= 0, R_S= 0.1 W, V_CC= 20 V.

P R O D U C T

I N F O R M A T I O N

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6

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