BD246C

更新时间： 2024-02-29 03:40:55

品牌	Logo	应用领域
COMSET		晶体晶体管
页数	文件大小	规格书
3页	75K
描述
PNP SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS

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数据手册

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BD246C 数据手册

BD246, A, B, C

PNP SINGLE-DIFFUSED MESA SILICON POWER

TRANSISTORS

The BD246 series are PNP power transistors in a TO3PN envelope.

They are the power transistors for power amplifier and high-speed-switching applications.

The complementary is BD245, A, B, C

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

BD246

-45

-60

-80

-100

-55

BD246A

BD246B

BD246C

BD246

V_CEO

Collector-Emitter Voltage (I_C= -30mA)

BD246A

BD246B

BD246C

-70

-90

-115

-5.0

-10

V_CER

Collector-Emitter Voltage (R_BE= 100 Ω)

V_EBO

I_C

Emitter-Base Voltage

Collector Current

I_C

I_CM

-15

I_B

Base Current

-3

P_T

T_J

T_S

Power Dissipation

Junction Temperature

Storage Temperature

_mb= 25° C

Watts

-65 to +150

°C

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

R_thJC

R_thJA

Junction to Case Thermal Resistance

Junction to free air Thermal Resistance

1.56

°C / W

25/09/2012

COMSET SEMICONDUCTORS

1/3

12 3

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