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BD246C PDF预览

BD246C

更新时间: 2024-11-26 06:41:51
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 122K
描述
Silicon PNP Power Transistors

BD246C 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.8
最大集电极电流 (IC):10 A配置:Single
最小直流电流增益 (hFE):4最高工作温度:150 °C
极性/信道类型:PNP最大功率耗散 (Abs):80 W
子类别:Other Transistors表面贴装:NO

BD246C 数据手册

 浏览型号BD246C的Datasheet PDF文件第2页浏览型号BD246C的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
BD250/A/B/C  
DESCRIPTION  
·With TO-3PN package  
·Complement to type BD249/A/B/C  
·125 W at 25°C case temperature  
·25 A continuous collector current  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
Fig.1 simplified outline (TO-3PN) and symbol  
3
Emitter  
Absolute maximum ratings(Ta=)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
-55  
UNIT  
BD246  
BD246A  
BD246B  
BD246C  
BD246  
-70  
VCBO  
Colector-base voltage  
Collector emitter  
V
-90  
-115  
-45  
BD246A  
BD246B  
BD246C  
-60  
VCEO  
Collector-emitter voltage  
Open base  
V
-80  
-100  
-5  
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current  
Open collector  
V
A
-25  
Collector current-peak  
Base current  
-40  
A
-5  
A
PC  
Tj  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC=25  
125  
W
-65~150  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
Thermal resistance junction to case  
VALUE  
UNIT  
Rth j-c  
1
/W  

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