Datasheet > BD246C

BD246C

更新时间： 2024-11-26 06:41:51

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	145K
描述
Silicon PNP Power Transistors

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中文翻译

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BD246C 数据手册

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

BD246/A/B/C

DESCRIPTION

·With TO-3PN package

·Complement to type BD245/A/B/C

APPLICATIONS

·For use in medium power linear

and switching applications

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-3PN) and symbol

Emitter

Absolute maximum ratings(Ta=ꢀ )

SYMBOL

PARAMETER

CONDITIONS

VALUE

-55

UNIT

BD246

BD246A

BD246B

BD246C

BD246

-70

V_CBO

Collector-base voltage

-90

-115

-45

BD246A

BD246B

BD246C

-60

V_CEO

Collector-emitter voltage

Open base

-80

-100

-5

V_EBO

I_C

I_CM

I_B

Emitter-base voltage

Collector current

Open collector

ꢀ

-10

Collector current-peak

Base current

-15

-3

P_C

T_j

Collector power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

-65~150

T_stg

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

R_{th j-c}

Thermal resistance junction to case

1.56

ꢀ/W

12 3

中文翻译

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