BD245C

更新时间： 2024-09-24 06:41:51

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管开关局域网
页数	文件大小	规格书
3页	150K
描述
isc Silicon NPN Power Transistor

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中文翻译

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技术参数
数据手册

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BD245C 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.56
Is Samacsys：	N	Base Number Matches：	1

BD245C 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BD245/A/B/C

DESCRIPTION

·Collector Current -I_C= 10A

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= 45V(Min)- BD245; 60V(Min)- BD245A

80V(Min)- BD245B; 100V(Min)- BD245C

·Complement to Type BD246/A/B/C

APPLICATIONS

·Designed for use in general purpose power amplifier and

switching applications

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BD245

BD245A

BD245B

BD245C

BD245

Collector-Emitter

Voltage (R_BE= 100Ω)

V_CER

115

BD245A

BD245B

BD245C

Collector-Emitter

Voltage

V_CEO

100

V_EBO

I_C

I_CM

I_B

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current

Collector Power Dissipation

@ T_a=25℃

Collector Power Dissipation

@ T_C=25℃

P_C

T_J

Junction Temperature

150

-65~150

℃

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance, Junction to Case

1.56

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

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中文翻译

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与BD245C相关器件

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BD245C-S	BOURNS	获取价格	Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
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BD246	POINN	获取价格	PNP SILICON POWER TRANSISTORS
BD246	TRSYS	获取价格	PNP SILICON POWER TRANSISTORS
BD246	ISC	获取价格	isc Silicon PNP Power Transistor
BD246	NJSEMI	获取价格	Trans GP BJT PNP 45V 10A 3-Pin(3+Tab) SOT-93
BD246A	TRSYS	获取价格	PNP SILICON POWER TRANSISTORS