BD246

更新时间： 2024-09-24 04:09:11

品牌	Logo	应用领域
伯恩斯 - BOURNS		晶体晶体管
页数	文件大小	规格书
5页	108K
描述
PNP SILICON POWER TRANSISTORS

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BD246 数据手册

BD246, BD246A, BD246B, BD246C

PNP SILICON POWER TRANSISTORS

●

Designed for Complementary Use with the

BD245 Series

SOT-93 PACKAGE

(TOP VIEW)

●

80 W at 25°C Case Temperature

10 A Continuous Collector Current

15 A Peak Collector Current

Customer-Specified Selections Available

Pin 2 is in electrical contact with the mounting base.

MDTRAAA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

BD246

-55

BD246A

BD246B

BD246C

BD246

-70

Collector-emitter voltage (R_BE= 100 Ω)

V_CER

-90

-115

-45

BD246A

BD246B

BD246C

-60

Collector-emitter voltage (I_C= -30 mA)

V_CEO

-80

-100

Emitter-base voltage

V_EBO

I_C

I_CM

I_B

-5

Continuous collector current

Peak collector current (see Note 1)

Continuous base current

-10

-15

-3

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Unclamped inductive load energy (see Note 4)

P_tot

°C

½LI_C

62.5

Operating junction temperature range

T_j

T_stg

T_L

-65 to +150

250

Storage temperature range

Lead temperature 3.2 mm from case for 10 seconds

NOTES: 1. This value applies for t_p≤ 0.3 ms, duty cycle ≤ 10%.

2. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I_B(on)= -0.4 A, R_BE= 100 Ω,

_BE(off)= 0, R_S= 0.1 Ω, V_CC= -20 V.

JUNE 1973 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

12 3 4 5

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