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BD245B PDF预览

BD245B

更新时间: 2024-11-03 12:51:11
品牌 Logo 应用领域
COMSET 晶体晶体管
页数 文件大小 规格书
3页 75K
描述
NPN SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS

BD245B 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:unknown
风险等级:5.6最大集电极电流 (IC):10 A
配置:Single最小直流电流增益 (hFE):25
最高工作温度:140 °C极性/信道类型:NPN
最大功率耗散 (Abs):3 W子类别:Other Transistors
表面贴装:NO标称过渡频率 (fT):3 MHz
Base Number Matches:1

BD245B 数据手册

 浏览型号BD245B的Datasheet PDF文件第2页浏览型号BD245B的Datasheet PDF文件第3页 
BD245 – A – B – C  
NPN SINGLE-DIFFUSED MESA SILICON POWER  
TRANSISTORS  
They are the power transistors for power amplifier and high-speed-switching applications.  
The complementary is BD246, A, B, C  
Compliance to RoHS.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCEO  
Ratings  
Value  
Unit  
BD245  
45  
60  
80  
100  
BD245A  
BD245B  
BD245C  
BD245  
Collector-Emitter Voltage (IC = -30mA)  
V
55  
BD245A  
BD245B  
BD245C  
70  
90  
115  
VCER  
V
Collector-Emitter Voltage (RBE = 100 )  
VEBO  
IC  
Emitter-Base Voltage  
Collector Current  
Base Current  
5.0  
10  
15  
3
V
A
IC  
ICM  
IB  
A
PT  
TJ  
TS  
Power Dissipation  
Junction Temperature  
Storage Temperature  
T
mb = 25° C  
80  
Watts  
-65 to +150  
-65 to +150  
°C  
THERMAL CHARACTERISTICS  
Symbol  
Ratings  
Value  
Unit  
RthJC  
RthJA  
Junction to Case Thermal Resistance  
Junction to free air Thermal Resistance  
1.56  
42  
°C / W  
°C / W  
22/10/2012  
COMSET SEMICONDUCTORS  
1/3  

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