Datasheet > BD245B

BD245B

更新时间： 2024-11-25 22:48:19

品牌	Logo	应用领域
POINN		晶体晶体管
页数	文件大小	规格书
6页	94K
描述
NPN SILICON POWER TRANSISTORS

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BD245B 技术参数

生命周期：	Transferred	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.29.00.95	风险等级：	5.71
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	10 A
集电极-发射极最大电压：	80 V	配置：	SINGLE
最小直流电流增益 (hFE)：	4	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

BD245B 数据手册

BD245, BD245A, BD245B, BD245C

NPN SILICON POWER TRANSISTORS

JUNE 1973 - REVISED MARCH 1997

●

Designed for Complementary Use with the

BD246 Series

SOT-93 PACKAGE

(TOP VIEW)

●

80 W at 25°C Case Temperature

10 A Continuous Collector Current

15 A Peak Collector Current

Customer-Specified Selections Available

Pin 2 is in electrical contact with the mounting base.

MDTRAA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

BD245

BD245A

BD245B

BD245C

BD245

Collector-emitter voltage (R_BE= 100 W)

V_CER

115

BD245A

BD245B

BD245C

Collector-emitter voltage (I_C= 30 mA)

V_CEO

100

Emitter-base voltage

V_EBO

I_C

I_CM

I_B

Continuous collector current

Peak collector current (see Note 1)

Continuous base current

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Unclamped inductive load energy (see Note 4)

P_tot

°C

½LI_C

62.5

Operating junction temperature range

T_j

T_stg

T_L

-65 to +150

250

Storage temperature range

Lead temperature 3.2 mm from case for 10 seconds

NOTES: 1. This value applies for t_p£ 0.3 ms, duty cycle £ 10%.

2. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I_B(on)= 0.4 A, R_BE= 100 W,

V_BE(off)= 0, R_S= 0.1 W, V_CC= 20 V.

P R O D U C T

I N F O R M A T I O N

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6

中文翻译

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与BD245B相关器件

型号	品牌	获取价格	描述	数据表
BD245B-S	BOURNS	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
BD245C	POINN	获取价格	NPN SILICON POWER TRANSISTORS
BD245C	BOURNS	获取价格	NPN SILICON POWER TRANSISTORS
BD245C	SAVANTIC	获取价格	Silicon NPN Power Transistors
BD245C	ISC	获取价格	isc Silicon NPN Power Transistor
BD245C	COMSET	获取价格	NPN SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS
BD245C	NJSEMI	获取价格	Trans GP BJT NPN 100V 10A 3-Pin(3+Tab) SOT-93
BD245C-S	BOURNS	获取价格	Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
BD245-S	BOURNS	获取价格	Power Bipolar Transistor, 10A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
BD246	COMSET	获取价格	PNP SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS

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