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BD245B PDF预览

BD245B

更新时间: 2024-11-26 06:41:51
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 150K
描述
isc Silicon NPN Power Transistor

BD245B 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.57
Base Number Matches:1

BD245B 数据手册

 浏览型号BD245B的Datasheet PDF文件第2页浏览型号BD245B的Datasheet PDF文件第3页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
BD245/A/B/C  
DESCRIPTION  
·Collector Current -IC= 10A  
·Collector-Emitter Breakdown Voltage-  
: V(BR)CEO = 45V(Min)- BD245; 60V(Min)- BD245A  
80V(Min)- BD245B; 100V(Min)- BD245C  
·Complement to Type BD246/A/B/C  
APPLICATIONS  
·Designed for use in general purpose power amplifier and  
switching applications  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
PARAMETER  
VALUE  
55  
UNIT  
BD245  
BD245A  
BD245B  
BD245C  
BD245  
70  
Collector-Emitter  
Voltage (RBE= 100Ω)  
VCER  
V
90  
115  
45  
BD245A  
BD245B  
BD245C  
60  
Collector-Emitter  
Voltage  
VCEO  
V
80  
100  
5
VEBO  
IC  
ICM  
IB  
Emitter-Base Voltage  
V
A
A
A
Collector Current-Continuous  
Collector Current-Peak  
Base Current  
10  
15  
3
Collector Power Dissipation  
@ Ta=25℃  
Collector Power Dissipation  
@ TC=25℃  
3
PC  
W
80  
TJ  
Junction Temperature  
150  
-65~150  
Storage Temperature Range  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance, Junction to Case  
1.56  
/W  
Rth j-c  
isc Websitewww.iscsemi.cn  

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