Datasheet > BCV26

BCV26

更新时间： 2024-10-14 08:50:47

品牌	Logo	应用领域
商升特 - SEMTECH		晶体晶体管达林顿晶体管光电二极管 PC
页数	文件大小	规格书
2页	130K
描述
PNP Darlington Transistors

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数据手册

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BCV26 数据手册

BCV26 / BCV46

PNP Darlington Transistors

for preamplifier input applications

SOT-23 Plastic Package

Value

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

-V_CBO

Unit

BCV26

BCV46

BCV26

BCV46

Collector Base Voltage

Collector Emitter Voltage

-V_CEO

Emitter Base Voltage

Collector Current

-V_EBO

-I_C

500

Peak Collector Current

Base Current

-I_CM

-I_B

800

100

Total Power Dissipation

Junction Temperature

Storage Temperature Range

P_tot

T_j

200

150

T_S

- 65 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at -V_CE= 5 V, -I_C= 1 mA

BCV26

BCV46

BCV26

BCV46

BCV26

BCV46

h_FE

4000

2000

10000

4000

20000

10000

at -V_CE= 5 V, -I_C= 10 mA

at -V_CE= 5 V, -I_C= 100 mA

Collector Cutoff Current

at -V_CB= 30 V

at -V_CB= 60 V

BCV26

BCV46

100

-I_CBO

Emitter Cutoff Current

at -V_EB= 10 V

Collector Base Breakdown Voltage

at -I_C= 100 µA

Collector Emitter Breakdown Voltage

at -I_C= 10 mA

Emitter Base Breakdown Voltage

at -I_E= 10 µA

Collector Emitter Saturation Voltage

at -I_C= 100 mA, -I_B= 0.1 mA

Base Emitter Saturation Voltage

at -I_C= 100 mA, -I_B= 0.1 mA

Base Emitter On-state Voltage

at -I_C= 10 mA, -V_CE= 5 V

-I_EBO

-V_(BR)CBO

-V_(BR)CEO

-V_(BR)EBO

-V_CE(sat)

-V_BE(sat)

-V_BE(on)

f_T

100

BCV26

BCV46

BCV26

BCV46

1.5

1.4

Transition Frequency

at -V_CE= 5 V, -I_C= 30 mA, f = 100 MHz

220

MHz

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 18/08/2007

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