是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SOT-23 |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | compliant | HTS代码: | 8541.21.00.95 |
风险等级: | 5.12 | 集电极-发射极最大电压: | 30 V |
配置: | DARLINGTON | 最小直流电流增益 (hFE): | 20000 |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 10 |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 220 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCV26S62Z | TI |
获取价格 |
1200mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB | |
BCV26S62Z | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon | |
BCV26-T | NXP |
获取价格 |
暂无描述 | |
BCV26T/R | NXP |
获取价格 |
TRANSISTOR 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BI | |
BCV26TA | DIODES |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, | |
BCV26-TAPE-13 | NXP |
获取价格 |
TRANSISTOR 300 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa | |
BCV26-TAPE-7 | NXP |
获取价格 |
TRANSISTOR 300 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa | |
BCV26TC | DIODES |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, | |
BCV26TR | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 30V V(BR)CEO, 1-Element, PNP, Silicon, | |
BCV26TR13 | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 30V V(BR)CEO, 1-Element, PNP, Silicon, |