Datasheet > BCV27

BCV27

更新时间： 2024-10-02 08:50:47

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管光电二极管
页数	文件大小	规格书
1页	333K
描述
TRANSISTOR (NPN)

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中文翻译

获取价格

数据手册

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BCV27 数据手册

BCV27

TRANSISTOR (NPN)

SOT–23

FEATURES

 High Collector Current

 High Current Gain

MARKING:FF

1. BASE

2. EMITTER

3. COLLECTOR

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

500

℃/W

℃

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

300

P_C

R_ΘJA

T_j

416

150

Storage Temperature

T_stg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

V_(BR)CBO

I_C=100µA, I_E=0

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=10mA, I_B=0

I_E=10µA, I_C=0

V_CB=30V, I_E=0

0.1

µA

I_EBO

V_EB=4V, I_C=0

Emitter cut-off current

h_FE(1)

h_FE(2)

h_FE(3)

h_FE(4)

V_CE(sat)

V_BE(sat)

f_T

V_CE=1V, I_C=100µA

V_CE=5V, I_C=10mA

V_CE=5V, I_C=100mA

V_CE=5V, I_C=0.5A

4000

10000

20000

4000

DC current gain

I_C=100mA, I_B=0.1mA

V_CE=5V,I_C=50mA, f=100MHz

V_CB=10V, I_E=0, f=1MHz

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

1.5

170

3.5

MHz

C_ob

Collector output capacitance

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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