Datasheet > BCV27-Q

BCV27-Q

更新时间： 2024-11-25 11:15:55

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
8页	181K
描述
NPN Darlington transistorProduction

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中文翻译

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BCV27-Q 数据手册

BCV27-Q

NPN Darlington transistor

6 April 2023

Product data sheet

1. General description

NPN Darlington transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

•

Medium current of 500 mA

•

Low voltage of 30 V

High DC current gain of minimum 4000

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Preamplifier input amplification

4. Quick reference data

Table 1. Quick reference data

Symbol

V_CBO

Parameter

Conditions

Min

Typ

Max

Unit

collector-base voltage open emitter

V_CES

collector-emitter

voltage

base short-circuited to emitter

I_C

collector current

500

800

I_CM

h_FE

peak collector current

DC current gain

V_CE= 5 V; I_C= 100 mA; T_amb= 25 °C

[1]

20000

[1] Pulse test: t_p≤ 300 μs; δ ≤ 0.02

5. Pinning information

Table 2. Pinning information

Symbol

Description

base

Simplified outline

Graphic symbol

emitter

TR1

collector

TR2

aaa-029089

SOT23

12 3 4 5 6 7 8

中文翻译

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