生命周期: | Obsolete | 零件包装代码: | SOT-23 |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.12 |
最大集电极电流 (IC): | 0.5 A | 集电极-发射极最大电压: | 30 V |
配置: | DARLINGTON | 最小直流电流增益 (hFE): | 4000 |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 200 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCV26-TAPE-13 | NXP |
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TRANSISTOR 300 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa | |
BCV26-TAPE-7 | NXP |
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TRANSISTOR 300 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa | |
BCV26TC | DIODES |
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Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, | |
BCV26TR | CENTRAL |
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Small Signal Bipolar Transistor, 30V V(BR)CEO, 1-Element, PNP, Silicon, | |
BCV26TR13 | CENTRAL |
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Small Signal Bipolar Transistor, 30V V(BR)CEO, 1-Element, PNP, Silicon, | |
BCV26TRL | NXP |
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暂无描述 | |
BCV26TRL13 | NXP |
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TRANSISTOR 300 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa | |
BCV26TRL13 | YAGEO |
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Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon | |
BCV27 | NXP |
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NPN Darlington transistors | |
BCV27 | ZETEX |
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NPN SILICON PLANAR DARLINGTON TRANSISTORS |