Datasheet > BCV27

BCV27

更新时间： 2024-11-23 22:27:23

品牌	Logo	应用领域
德欧泰克 - DIOTEC		晶体晶体管光电二极管
页数	文件大小	规格书
2页	70K
描述
Surface mount Si-Epitaxial PlanarTransistors

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数据手册

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BCV27 数据手册

BCV27, BCV47

NPN

Darlington Transistors

NPN

Surface mount Si-Epitaxial PlanarTransistors

Si-Epitaxial PlanarTransistoren für die Oberflächenmontage

Version 2004-01-20

Power dissipation – Verlustleistung

250 mW

2.9^±0.1

Plastic case

Kunststoffgehäuse

SOT-23

(TO-236)

1.1

0.4

Type

Code

Weight approx. – Gewicht ca.

0.01 g

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

1.9

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

Dimensions / Maße in mm

1 = B1 2 = E2 3 = C

Maximum ratings (T_A= 25/C)

Grenzwerte (T_A= 25/C)

BCV27

BCV47

60 V

Collector-Emitter-voltage

V_BE= 0

E open

C open

V_CES

V_CB0

V_EB0

P_tot

30 V

40 V

Collector-Base-voltage

80 V

Emitter-Base-voltage

10 V

Power dissipation – Verlustleistung

Collector current – Kollektorstrom (dc)

250 mW ¹)

500 mA

800 mA

100 mA

150/C

I_C

Peak Collector current – Kollektor-Spitzenstrom I_CM

Base current – Basisstrom (dc)

I_B

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

T_j

T_S

- 65…+ 150/C

Characteristics (T_j= 25/C)

Kennwerte (T_j= 25/C)

Min.

Typ.

Max.

Collector-Base cutoff current – Kollektorreststrom

I_E= 0, V_CB= 30 V

I_E= 0, V_CB= 60 V

BCV27

BCV47

I_CB0

–

100 nA

Emitter-Base cutoff current – Emitterreststrom

I_C= 0, V_EB= 10 V

Collector saturation volt. – Kollektor-Sättigungsspg. ²)

I_EB0

–

100 nA

1 V

I_C= 100 mA, I_B= 0.1 mA V_CEsat

)

Mounted on P.C. board with 3 mm²copper pad at each terminal

Montage auf Leiterplatte mit 3 mm²Kupferbelag (Lötpad) an jedem Anschluß

Tested with pulses t_p= 300 :s, duty cycle # 2% – Gemessen mit Impulsen t_p= 300 :s, Schaltverhältnis # 2%

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