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BCV26_07 PDF预览

BCV26_07

更新时间: 2024-11-20 08:50:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管达林顿晶体管
页数 文件大小 规格书
8页 76K
描述
PNP Silicon Darlington Transistors

BCV26_07 数据手册

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BCV26, BCV46  
PNP Silicon Darlington Transistors  
For general AF applications  
High collector current  
2
1
3
High current gain  
Complementary types: BCV27, BCV47 (NPN)  
1)  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
Type  
Marking  
FDs  
Pin Configuration  
Package  
SOT23  
SOT23  
BCV26  
BCV46  
1=B  
1=B  
2=E  
2=E  
3=C  
3=C  
FEs  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
V
Collector-emitter voltage  
BCV26  
V
V
V
CEO  
CBO  
EBO  
30  
60  
BCV46  
Collector-base voltage  
BCV26  
40  
BCV46  
80  
10  
Emitter-base voltage  
Collector current  
500  
800  
100  
200  
360  
mA  
I
C
Peak collector current  
Base current  
I
CM  
I
B
Peak base current  
Total power dissipation-  
I
BM  
mW  
°C  
P
tot  
T 74 °C  
S
150  
Junction temperature  
Storage temperature  
T
j
T
-65 ... 150  
stg  
1Pb-containing package may be available upon special request  
2007-04-20  
1

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