生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code: | unknown | 风险等级: | 5.02 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 1 A |
集电极-发射极最大电压: | 25 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 60 | JEDEC-95代码: | TO-261AA |
JESD-30 代码: | R-PDSO-G4 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 4 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | PNP | 功耗环境最大值: | 1.5 W |
最大功率耗散 (Abs): | 1.5 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 60 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
BCP69,115 | NXP |
功能相似 |
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BCP69T1G | ONSEMI |
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BCP69T1/D | ETC |
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PNP Epitaxial Transistor | |
BCP69T1G | ONSEMI |
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PNP Silicon Epitaxial Transistor | |
BCP69T3 | MOTOROLA |
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1A, 25V, PNP, Si, POWER TRANSISTOR, TO-261AA | |
BCP69T3 | ONSEMI |
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1A, 20V, PNP, Si, POWER TRANSISTOR, TO-261AA, CASE 318E-04, TO-261, 4 PIN | |
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BCP69TA | DIODES |
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BCP69-TAPE-7 | NXP |
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TRANSISTOR 1 A, 20 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power | |
BCP69TC | DIODES |
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BCP69TRL | YAGEO |
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Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 | |
BCP69TRL | NXP |
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TRANSISTOR 1 A, 20 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power |