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BCP772-O-C PDF预览

BCP772-O-C

更新时间: 2022-02-26 10:23:57
品牌 Logo 应用领域
SECOS /
页数 文件大小 规格书
2页 256K
描述
PNP Plastic Encapsulated Transistor

BCP772-O-C 数据手册

 浏览型号BCP772-O-C的Datasheet PDF文件第2页 
BCP772  
-3A, -40V  
PNP Plastic Encapsulated Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
FEATURES  
BCP772 has Low Speed Switching  
SOT-89  
MARKING  
B772  
4
CLASSIFICATION OF hFE  
1
2
3
A
E
Product-Rank  
BCP772-O  
BCP772-P  
160~320  
BCP772-GR  
200~400  
C
Range  
100~200  
B
D
PACKAGE INFORMATION  
F
G
H
Package  
MPQ  
Leader Size  
7 inch  
K
SOT-89  
1K  
J
L
Collector  
24  
ORDER INFORMATION  
Millimeter  
Millimeter  
REF.  
REF.  
Min.  
Max.  
4.60  
4.25  
1.60  
2.60  
Min.  
Max.  
Part Number  
Type  
Lead (Pb)-free  
Lead (Pb)-free and Halogen-free  
A
B
C
D
4.40  
3.94  
1.40  
2.25  
G
H
J
0.40  
0.58  
1.50 TYP  
3.00 TYP  
1
Base  
BCP772-  
K
0.32  
0.52  
0.44  
E
F
1.55 TYP.  
L
0.35  
BCP772--C  
=Rank  
0.89  
1.20  
3
Emitter  
*
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
-40  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
-30  
V
Emitter-Base Voltage  
-6  
V
Collector Current-Continuous  
Collector Power Dissipation  
Thermal Resistance from Junction-Ambient  
Junction and Storage Temperature  
-3  
A
PC  
0.5  
W
RθJA  
250  
°C/W  
°C  
TJ, TSTG  
150, -55~150  
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)  
Parameter  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
IC= -100µA, IE=0  
IC= -10mA, IB=0  
-40  
-
-
-
-
-
-
-
-
-
-
-
V
V
-30  
-
-6  
-
V
IE= -100µA, IC=0  
VCB= -40V, IE=0  
-
-1  
µA  
µA  
µA  
Collector Cut-off Current  
ICEO  
-
-
-10  
-1  
VCE= -30V, IB=0  
Emitter Cut-off Current  
IEBO  
VEB= -6V, IC=0  
DC Current Gain  
hFE  
100  
-
400  
-0.5  
-1.5  
-
VCE= -2V, IC= -1A  
IC= -2A, IB= -0.2A  
IC= -2A, IB= -0.2A  
VCE= -5V, IC= -0.1A, f=10MHz  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Transition Frequency  
VCE(sat)  
VBE(sat)  
fT  
V
V
-
50  
MHz  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
05-Dec-2017 Rev. D  
Page 1 of 2  

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