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BCP69T3 PDF预览

BCP69T3

更新时间： 2024-09-17 21:21:07
品牌 Logo 应用领域
安森美 - ONSEMI 光电二极管晶体管
页数 文件大小 规格书
4页 117K
描述
1A, 20V, PNP, Si, POWER TRANSISTOR, TO-261AA, CASE 318E-04, TO-261, 4 PIN

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BCP69T3 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TO-261AA包装说明：CASE 318E-04, TO-261, 4 PIN
针数：4Reach Compliance Code：not_compliant
ECCN代码：EAR99风险等级：5.02
外壳连接：COLLECTOR最大集电极电流 (IC)：1 A
集电极-发射极最大电压：20 V配置：SINGLE
最小直流电流增益 (hFE)：60JEDEC-95代码：TO-261AA
JESD-30 代码：R-PDSO-G4JESD-609代码：e0
湿度敏感等级：1元件数量：1
端子数量：4最高工作温度：140 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：PNP最大功率耗散 (Abs)：1.5 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管元件材料：SILICON
标称过渡频率 (fT)：60 MHzBase Number Matches：1

BCP69T3 数据手册

 浏览型号BCP69T3的Datasheet PDF文件第2页浏览型号BCP69T3的Datasheet PDF文件第3页浏览型号BCP69T3的Datasheet PDF文件第4页 
BCP69T1G, NSVBCP69T1G  
PNP Silicon  
Epitaxial Transistor  
This PNP Silicon Epitaxial Transistor is designed for use in low  
voltage, high current applications. The device is housed in the  
SOT−223 package, which is designed for medium power surface  
mount applications.  
http://onsemi.com  
Features  
• High Current: I = −1.0 A  
• The SOT−223 Package Can Be Soldered Using Wave or Reflow.  
• SOT−223 package ensures level mounting, resulting in improved  
thermal conduction, and allows visual inspection of soldered joints.  
The formed leads absorb thermal stress during soldering, eliminating  
the possibility of damage to the die.  
MEDIUM POWER  
PNP SILICON  
HIGH CURRENT  
TRANSISTOR  
C
SURFACE MOUNT  
• NPN Complement is BCP68  
• AEC−Q101 Qualified and PPAP Capable  
COLLECTOR 2,4  
• NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
BASE  
1
EMITTER 3  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
MARKING  
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Collector Current  
Symbol Value  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
DIAGRAM  
4
V
CEO  
V
CBO  
V
EBO  
−20  
−25  
−5.0  
−1.0  
1
2
AYW  
3
CEG  
SOT−223 (TO−261)  
CASE 318E  
G
I
C
STYLE 1  
Total Power Dissipation @ T = 25°C (Note 1)  
P
D
1.5  
12  
W
mW/°C  
A
Derate above 25°C  
CE = Specific Device Code  
Operating and Storage Temperature Range  
T , T  
−65 to  
°C  
J
stg  
A
Y
W
G
= Assembly Location  
= Year  
= Work Week  
150  
THERMAL CHARACTERISTICS  
Characteristic  
= Pb−Free Package  
Symbol  
Max  
Unit  
(*Note: Microdot may be in either location)  
Thermal Resistance − Junction−to−Ambient  
(Surface Mounted)  
R
83.3  
°C/W  
q
JA  
ORDERING INFORMATION  
Lead Temperature for Soldering,  
0.0625 in from case  
Time in Solder Bath  
T
L
260  
10  
°C  
†
Device  
Package  
Shipping  
s
BCP69T1G  
SOT−223  
(Pb−Free)  
1000 / Tape & Reel  
1000 / Tape & Reel  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.  
x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.  
NSVBCP69T1G SOT−223  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
November, 2011 − Rev. 11  
BCP69T1/D  
 
1234

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